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Studying of the electropolymerisation on CVD graphene and epitaxial graphene on silicon carbide
Yves Pain
,
Christophe Coillot
,
Perine Landois
,
Jimmy Nicolle
,
Mohamed Ramzi Ammar
et al.
Carbon 2023, Jul 2023, Cancun, Quintana Roo, Mexico
Communication dans un congrès
hal-04716226
v1
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Toward the Reproducible Growth of Graphene on Wide SiC Steps: A Study of the Geometric Properties of 4H-SiC (0001) Substrates
Haitham Hrich
,
Matthieu Moret
,
Olivier Briot
,
Matthieu Paillet
,
Jean Manuel Decams
et al.
Communication dans un congrès
hal-03845325
v1
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Capteur de gaz à base de graphène dédié au bilan carbone du cOMPOSTage de proximité
V. Astié
,
Nicolas Brun
,
Christophe Coillot
,
Sylvie Contreras
,
J.M. Decams
et al.
ID en action !, Mission pour les initiatives transverses et interdisciplinaires du CNRS (MITI), Nov 2022, Paris, France
Communication dans un congrès
hal-04209570
v1
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Démonstration d’une électrode de graphène en vue d’une détection électrochimique de polluants en milieu aqueux
Yves Pain
,
Christophe Coillot
,
Christophe Roblin
,
Périne Landois
,
Jimmy Nicolle
et al.
Société Francophone d’Etude des Carbones (SFEC), Apr 2022, Nouan-le-Fuzelier, France
Communication dans un congrès
hal-04786003
v1
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Epitaxial graphene growth and characterisation of buffer layer on SiC(0001)
Tianlin Wang
,
Jean-Roch Huntzinger
,
Jean-Manuel Decams
,
Maxime Bayle
,
Ahmed Azmi Zahab
et al.
2D materials on substrates: growth & properties, Jan 2020, Villard de Lans, France
Communication dans un congrès
hal-03040807
v1
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Sublimation de carbure de silicium : de la couche tampon à la monocouche de graphène
Perine Landois
,
Jean-Roch Huntzinger
,
Tianlin Wang
,
Maxime Bayle
,
Benoit Jouault
et al.
Congrès annuel SFEC, Apr 2020, Samatan, France
Communication dans un congrès
hal-03040832
v1
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Epitaxial graphene growth at low argon pressure and characterization of buffer layer on SiC(0001)
Tianlin Wang
,
Perine Landois
,
Jean-Roch Huntzinger
,
Ahmed Azmi Zahab
,
Alessandro de Cecco
et al.
GDR-I Graphene and co Annual meeting 2018, Oct 2018, Sète, France
Communication dans un congrès
hal-01923963
v1
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High Temperature Annealing of MBE-grown Mg-doped GaN
Sylvie Contreras
,
Leszek Konczewicz
,
Herve Peyre
,
Sandrine Juillaguet
,
M. Al Khalfioui
et al.
Communication dans un congrès
hal-01935176
v1
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Comparative study of p-type 4H-SiC grown on n-type and semi insulating 4H-SiC substrates
Sylvie Contreras
,
Leszek Konczewicz
,
Roxana Arvinte
,
Herve Peyre
,
Thierry Chassagne
et al.
11th European Conference on Silicon Carbide and Related Materials, Sep 2016, Thessaloniki, Greece. pp.275
Communication dans un congrès
hal-01935564
v1
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Epitaxial growth of low doped monolayer graphene on 4H-SIC (0001) at low argon pressure
Tianlin Wang
,
Perine Landois
,
Maxime Bayle
,
Jean-Roch Huntzinger
,
Alessandro de Cecco
et al.
GDR-I Graphene and co Annual meeting 2017, Oct 2017, Aussois, France
Communication dans un congrès
hal-01924058
v1
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Electrical transport properties of p-type 4H-SiC
Sylvie Contreras
,
Leszek Konczewicz
,
Roxana Arvinte
,
Herve Peyre
,
Thierry Chassagne
et al.
Communication dans un congrès
hal-01540938
v1
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Influence of Growth Temperature on Site Competition Effects During Chemical Vapor Deposition of 4H-SiC Layers
Marcin Zielinski
,
Thierry Chassagne
,
Roxana Arvinte
,
Adrien Michon
,
Marc Portail
et al.
11th European Conference on Silicon Carbide and Related Materials, Sep 2016, Thessaloniki, Greece. pp.79
Communication dans un congrès
hal-01935556
v1
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Optical investigations and strain effect in AlGaN/GaN epitaxial layers
M. Jayasakthi
,
Sandrine Juillaguet
,
Herve Peyre
,
Leszek Konczewicz
,
Matthieu Moret
et al.
Communication dans un congrès
hal-01935164
v1
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Electrical Transport Properties of Highly Aluminum Doped p-Type 4H-SiC
Sylvie Contreras
,
Leszek Konczewicz
,
Pawel Kwasnicki
,
Roxana Arvinte
,
Herve Peyre
et al.
Communication dans un congrès
hal-01936580
v1
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p-Type Doping of 4H- and 3C-SiC Epitaxial Layers with Aluminum
Marc Zielinski
,
Roxana Arvinte
,
Thierry Chassagne
,
Adrien Michon
,
Marc Portail
et al.
Communication dans un congrès
hal-01936467
v1
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Non-trivial Berry phase in the Cd3As2 3D Dirac semimetal
Wilfried Desrat
,
Christophe Consejo
,
Frederic Teppe
,
Sylvie Contreras
,
M. Marcinkiewicz
et al.
Communication dans un congrès
hal-01932656
v1
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Midwave infrared InAs/GaSb superlattice photodiode with a dopant-free p-n junction
M. Delmas
,
J. B. Rodriguez
,
R. Taalat
,
Leszek Konczewicz
,
Wilfried Desrat
et al.
Communication dans un congrès
hal-01216731
v1
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Study of Geometrical Effects in Charge Pumping Current for Lateral SiC nMOSFETs Electrical Characterization
Matthieu Florentin
,
Joan Marc Rafi
,
Florian Chevalier
,
Victor Soler
,
Leszek Konczewicz
et al.
Communication dans un congrès
hal-01936637
v1
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Improvement of the Specific Contact Resistance on P-Type 4H-SiC by Using a Highly P-Typed Doped 4H-SiC Layer Selectively Grown by VLS Transport
Nicolas Thierry-Jebali
,
Arthur Vo-Ha
,
Davy Carole
,
Mihai Lazar
,
Gabriel Ferro
et al.
Communication dans un congrès
hal-01391861
v1
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La spectrométrie Raman comme outil pour l'étude du dopage du graphène
Matthieu Paillet
,
Romain Parret
,
Miguel Rubio-Roy
,
Antoine Tiberj
,
Jean-Roch Huntzinger
et al.
Matériaux 2014, Nov 2014, Montpellier, France
Communication dans un congrès
hal-01974125
v1
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Genomic and EST microsatellite loci development and use in olive: molecular tools for genetic mapping and association studies
Laila Essalouh
,
A. Z. El-Aabidine
,
Sylvie Contreras
,
I. B. Sadok
,
Sylvain Santoni
et al.
7. International Symposium on Olive Growing, International Society for Horticultural Science (ISHS). Leuven, INT., Sep 2012, San Julian, Argentina. 736 p
Communication dans un congrès
hal-01269135
v1
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Raman Investigation of Heavily Al Doped 4H-SiC Layers Grown by CVD
Pawel Kwasnicki
,
Roxana Arvinte
,
Herve Peyre
,
Marcin Zielinski
,
Leszek Konczewicz
et al.
Communication dans un congrès
hal-01936666
v1
|
|
Raman spectroscopy as a tool to study the doping of graphene
Antoine Tiberj
,
Miguel Rubio-Roy
,
Romain Parret
,
Matthieu Paillet
,
Jean-Roch Huntzinger
et al.
Nanospain Conference 2014, Mar 2014, Spain
Communication dans un congrès
hal-00989874
v1
|
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Reversible Optical Doping of graphene
Antoine Tiberj
,
Miguel Rubio-Roy
,
Matthieu Paillet
,
Jean-Roch Huntzinger
,
Périne Landois
et al.
ImagineNano/Nanospain 2013, Apr 2013, Bilbao, Spain
Communication dans un congrès
hal-00954962
v1
|
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Raman investigation of aluminum-doped 4H-SiC
Sandrine Juillaguet
,
Pawel Kwasnicki
,
Herve Peyre
,
Leszek Konczewicz
,
Sylvie Contreras
et al.
Communication dans un congrès
hal-00803766
v1
|
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Pressure studies of multicarrier conduction in undoped InN grown on GaN buffer
H. Dmowski
,
Leszek Konczewicz
,
T. Suski
,
Sylvie Contreras
,
H. Lu
et al.
Communication dans un congrès
istex
hal-01936833
v1
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Changes induced by doping on the Raman spectrum of monolayer and bilayer graphene
Jean-Louis Sauvajol
,
Matthieu Paillet
,
Antoine Tiberj
,
Jean-Roch Huntzinger
,
Romain Parret
et al.
Advances and Applications in Carbon Related nanomaterials: From pure to doping including heteroatom, Sep 2013, Castelldefels, Spain
Communication dans un congrès
hal-00867474
v1
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P3 : un outil pour la formation à la gestion et au pilotage d'ateliers de production
Patrick Pujo
,
F Ounnar
,
B Borriello
,
Sylvie Contreras
,
M C Gonzalez
VII° colloque 'Questions de Pédagogies dans l'Enseignement Supérieur' (QPES'13), 2013, Sherbrooke, Unknown Region
Communication dans un congrès
hal-01216885
v1
|
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Reversible Optical Doping of graphene
Antoine Tiberj
,
Miguel Rubio-Roy
,
Matthieu Paillet
,
Jean-Roch Huntzinger
,
Périne Landois
et al.
GDR-I GNT 2013, Apr 2013, Guidel-Plages, Lorient, France
Communication dans un congrès
hal-00813854
v1
|
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Mobility spectrum analysis on AlGaN/AlN/GaN heterostructures grown on Fe-doped GaN templates
Sylvie Contreras
,
Wilfried Desrat
,
Leszek Konczewicz
EXMATEC 2012, May 2012, Ile de Porquerolles, France
Communication dans un congrès
hal-00806216
v1
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Structural and Electrical Properties of Graphene Films Grown by Propane/Hydrogen CVD on 6H-SiC(0001)
A. Michon
,
E. Roudon
,
M. Portail
,
Benoit Jouault
,
S. Contreras
et al.
Communication dans un congrès
hal-03037521
v1
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Low Temperature Photoluminescence Investigation of 3-inch SiC Wafers for Power Device Applications
Hervé Peyre
,
Jianwu Sun
,
Jude Guelfucci
,
Sandrine Juillaguet
,
J. Hassan
et al.
Communication dans un congrès
hal-00655897
v1
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Performances Analysis of Symmetrical and Asymmetrical InAs/GaSb Superlattice pin Photodiode
Cyril Cervera
,
Rachid Taalat
,
Philippe Christol
,
Jean-Baptiste Rodriguez
,
K. Jaworowicz
et al.
Conference on Infrared Technology and Applications XXXVII, Apr 2011, Orlando, United States. pp.801213, ⟨10.1117/12.882133⟩
Communication dans un congrès
hal-00641337
v1
|
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Propriétés électriques de photodiodes infrarouges à superréseaux InAs/GaSb
C. Cervera
,
J.-B. Rodriguez
,
Philippe Christol
,
L. Konczewicz
,
Sylvie Contreras
et al.
XIIIème Journées Nationales Microélectronique Optoélectronique (JNMO), 2010, Les Issambres, France
Communication dans un congrès
hal-01831153
v1
|
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Electronic Properties of InAs/GaSb Superlattice Detectors to Evaluate High Temperature Operation.
Philippe Christol
,
C. Cervera
,
R. Chaghi
,
H. Ait-Kaci
,
J. B. Rodriguez
et al.
Conference On Quantum Sensing and Nanophotonic Devices VII, Jan 2010, San Francisco (CA), France. pp.76081U
Communication dans un congrès
hal-00543643
v1
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Residual carrier concentration in InAs/GaSb superlattice structures to define optimized midwave infrared photodiode
L. Konczewicz
,
Sylvie Contreras
,
M. Baj
,
C. Cervera
,
J.-P. Perez
et al.
Exmatec Conference, 2010, Darmstadt, Germany
Communication dans un congrès
hal-01831030
v1
|
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Transport measurements on InAs/GaSb superlattice structures for mid-infrared photodiode
C. Cervera
,
Jean-Philippe Perez
,
Radouane Chaghi
,
Jean-Baptiste Rodriguez
,
Philippe Christol
et al.
16th International Conference on Electron Dynamics in Semiconductors, Optoelectronics and Nanostructures (EDISON 16), Aug 2009, Montpellier (FRANCE), France. pp.012030
Communication dans un congrès
hal-00536291
v1
|
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Effect of pressure on electrical properties of short period InAs/GaSb superlattice
Leszek Konczewicz
,
Sylvie Contreras
,
H. Aït-Kaci
,
Y. Cuminal
,
Jean-Baptiste Rodriguez
et al.
13th International Conference on High Pressure Semiconductor Physics (HPSP-13), Jul 2008, Fortaleza (BRAZIL), France. pp.643-647
Communication dans un congrès
hal-00401354
v1
|
|
Electrical transport phenomena in magnesium-doped p-type GaN
Leszek Konczewicz
,
Elzbieta Litwin-Staszewska
,
Sylvie Contreras
,
Ryszard Piotrzkowski
,
Leslaw Dmowski
13th International Conference on High Pressure Semiconductor Physics (HPSP-13), Jul 2008, Fortaleza (BRAZIL), France. pp.658-663
Communication dans un congrès
hal-00401355
v1
|
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High temperature behaviour of AlGaN/AlN/GaN Hall-FET sensors
Laure Bouguen
,
Leszek Konczewicz
,
Sylvie Contreras
,
Benoit Jouault
,
Jean Camassel
et al.
9th International Workshop on Expert Evaluation and Control Compound Semiconductor Materials and Technologies, Jun 2008, Lodz (POLAND), France. pp.1-4
Communication dans un congrès
hal-00536293
v1
|
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Zero-thermal drift quantum Well Hall Sensor
Vincent Mosser
,
A. Kerlain
,
Youcef Haddab
,
L. Bouguen
,
Benoit Jouault
et al.
Proceeding Eurosensors XXII, Sep 2008, Dresden, Germany
Communication dans un congrès
hal-00394192
v1
|
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Pressure characterization of AlGaN/GaN Hall sensors
Leszek Konczewicz
,
Sylvie Contreras
,
L. Bouguen
,
Benoit Jouault
,
Jean Camassel
et al.
13th International Conference on High Pressure Semiconductor Physics, Jul 2008, Fortaleza,, Brazil
Communication dans un congrès
hal-00401344
v1
|
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Evaluation of magnetic sensors based on AlGaN/GaN heterostructures: temperature dependence
L. Bouguen
,
Sylvie Contreras
,
Benoit Jouault
,
L. Konczewicz
,
Y. Cordier
et al.
Proceeding of 16th European workshop on Heterostructure Technology, Sep 2007, Frejus, France
Communication dans un congrès
hal-00394196
v1
|
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Top injection and side injection to a buried 2DEG : beyond the Murrmann-Berger model
Vincent Mosser
,
A. Kerlain
,
Olivier Couturaud
,
Christophe Chaubet
,
Benoit Jouault
et al.
Proceeding of 16th European workshop on Heterostructure Technology, Sep 2007, Frejus, France
Communication dans un congrès
hal-00394194
v1
|
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Results of SIMS, LTPL and temperature-dependent Hall effect measurements performed on Al-doped alpha-SiC substrates grown by the M-PVT method
Sylvie Contreras
,
M. Zielinski
,
Leszek Konczewicz
,
Caroline Blanc
,
Sandrine Juillaguet
et al.
International Conference on Silicon Carbide and Related Materials (ICSCRM 2005), Sep 2005, Pittsburgh (PA), France. pp.633-636
Communication dans un congrès
hal-00536296
v1
|
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Impact of annealing temperature ramps on the electrical activation of N+ and P+ co-implanted SiC layers
S. Blanque
,
R. Perez
,
N. Mestres
,
Sylvie Contreras
,
Jean Camassel
et al.
International Conference on Silicon Carbide and Related Materials (ICSCRM 2005), Sep 2005, Pittsburgh (PA), France. pp.795-798
Communication dans un congrès
hal-00536300
v1
|
|
High temperature electrical investigations of (AI,Ga)N/GaN heterostructures - Hall sensor applications
Christophe Consejo
,
Sylvie Contreras
,
Leszek Konczewicz
,
P. Lorenzini
,
Y. Cordier
et al.
7th International Workshop on Expert Evaluation and Control of Compound Semiconductor Materials and Technologies, Jun 2004, Montpellier (FRANCE), France. pp.1438-1443
Communication dans un congrès
hal-00543735
v1
|
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Evaluation of p-type doping for (1,1,-2,0) epitaxial layers grown on alpha-cut (1,1,-2,0) 4H-SiC substrates
Caroline Blanc
,
M. Zielinski
,
V. Souliere
,
C. Sartel
,
Sandrine Juillaguet
et al.
5th European Conference on Silicon Carbide and Related Materials, Aug 2004, Bologna (ITALY), France. pp.117-120
Communication dans un congrès
hal-00541640
v1
|
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Electrical properties of p-type in-situ doped vs. Al-implanted 4H-SiC
J. Pernot
,
Sylvie Contreras
,
Jean Camassel
,
Jean-Louis Robert
5th European Conference on Silicon Carbide and Related Materials, Aug 2004, Bologna (ITALY), France. pp.401-404
Communication dans un congrès
hal-00543771
v1
|
|
Innovative pressure and Hall sensors based on semiconductor compounds
Sylvie Contreras
,
Vincent Mosser
,
Leszek Konczewicz
,
Jean Camassel
,
Jean-Louis Robert
ESTEC, 4th Round Table on Micro/Nano Technologies for Space, May 2003, Noordwijk, Netherlands
Communication dans un congrès
hal-00402969
v1
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From Transport Measurements to Infrared Reflectance Spectra of n-type Doped 4H-SiC Layer Stacks
Julien Pernot
,
Jean Camassel
,
Hervé Peyre
,
Sylvie Contreras
,
Jean-Louis Robert
European Conference on Silicon Carbide and Related Materials (ECSCRM2002), Sep 2002, Linköping, Sweden. pp.403-406
Communication dans un congrès
hal-00389889
v1
|
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High pressure study of the electrical transport phenomena in AlGaN/GaN heterostructures
Christophe Consejo
,
Leszek Konczewicz
,
Sylvie Contreras
,
Benoit Jouault
,
S. Lepkowsky
et al.
10th International Conference on High Pressures in Semiconductor Physics (HPSP-X), Aug 2002, GUILDFORD (ENGLAND), France. pp.232-237
Communication dans un congrès
hal-00544457
v1
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Improved SiCOI Structures Elaborated by Heteroepitaxy of 3C-SiC on SOI
Thierry Chassagne
,
Gabriel Ferro
,
H. Y. Wang
,
Yanis Stoemenos
,
Hervé Peyre
et al.
International Conference on Silicon and Carbide and Related Materials 2001 (9th) (ICSCRM2001), Oct 2001, Tsukuba, Japan. pp.343-346
Communication dans un congrès
hal-00389892
v1
|
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Process-induced strain in silicon-on-insulator materials
Antoine Tiberj
,
B. Fraisse
,
Caroline Blanc
,
Sylvie Contreras
,
Jean Camassel
Conference on Extended Defects in Semiconductors (EDS 2002), Jun 2002, BOLOGNA (ITALY), France. pp.13411-13416
Communication dans un congrès
hal-00543870
v1
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4H-SiC material for Hall effect and high-temperature sensors working in harsh environments
Jean-Louis Robert
,
Sylvie Contreras
,
Jean Camassel
,
J. Pernot
,
Sandrine Juillaguet
et al.
International Conference on Silicon Carbide and Related Materials, Oct 2001, TSUKUBA (JAPAN), France. pp.1435-1438
Communication dans un congrès
hal-00543769
v1
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A novel selectively delta-doped AlGaAs/(In,Ga,As)/GaAs pseudomorphic heterostructure
L. Bouzaiene
,
L. Sfaxi
,
H. Sghaeir
,
H. Maaref
,
A. Cavanna
et al.
Communication dans un congrès
istex
hal-00544461
v1
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Raman, low temperature photoluminescence and transport investigation of N-implanted 6H-SiC
P. Thomas
,
Sylvie Contreras
,
Sandrine Juillaguet
,
Jean-Louis Robert
,
Jean Camassel
et al.
7th International Conference on Silicon Carbide, III-Nitrides and Related Materials (ICSCIII-N 97), Aug 1997, STOCKHOLM (SWEDEN), France. pp.725-728
Communication dans un congrès
hal-00543782
v1
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