Sylvie Contreras

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Publications

Molecularly imprinted polymer embedded by electropolymerization on chemical vapor deposition graphene for the electrochemical determination of isoproturon in water

Yves Pain , David Taleb , Aida Bensebaa , Jimmy Nicolle , Christophe Coillot et al.

Sensors and Actuators B: Chemical, 2026, 457, pp.139613. ⟨10.1016/j.snb.2026.139613⟩

Article dans une revue hal-05535470v1

Effect of the growth temperature on the crystal quality and optical properties in ZnS

Hassan Amadou Arifa , Olivier Briot , Sandrine Juillaguet , Herve Peyre , Bernard Fraisse et al.

Journal of Applied Physics, 2025, 138 (11), ⟨10.1063/5.0271678⟩

Article dans une revue hal-05295706v1
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High-Order Commensurate Zwitterionic Quinonoid Phase Induces a Nanoscale Dipole Lattice on Graphene

Gaelle Nassar , Diego Cortés-Arriagada , Luis Sanhueza-Vega , Périne Landois , Matthieu Paillet et al.

Journal of Physical Chemistry C, 2024, 128 (23), pp.9712-9721. ⟨10.1021/acs.jpcc.4c01695⟩

Article dans une revue hal-04609427v1
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Direct liquid injection pulsed-pressure MOCVD of large area MoS 2 on Si/SiO 2

Vincent Astié , Felipe Wasem Klein , Houssin Makhlouf , Matthieu Paillet , Jean-Roch Huntzinger et al.

Physical Chemistry Chemical Physics, 2024, 26 (40), pp.25772-25779. ⟨10.1039/D4CP00603H⟩

Article dans une revue hal-04734922v1
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Al‐Rich AlGaN Channel High Electron Mobility Transistors on Silicon: A Relevant Approach for High Temperature Stability of Electron Mobility

Julien Bassaler , Jash Mehta , Idriss Abid , Leszek Konczewicz , Sandrine Juillaguet et al.

Advanced Electronic Materials, 2024, 11 (1), pp.2400069. ⟨10.1002/aelm.202400069⟩

Article dans une revue hal-04665123v1
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Determining by Raman spectroscopy the average thickness and N -layer-specific surface coverages of MoS 2 thin films with domains much smaller than the laser spot size

Felipe Wasem Klein , Jean-Roch Huntzinger , Vincent Astié , Damien Voiry , Romain Parret et al.

Beilstein Journal of Nanotechnology, 2024, 15, pp.279-296. ⟨10.3762/bjnano.15.26⟩

Article dans une revue hal-04747945v1
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Low‐Temperature Electrical Transport Properties of Molecular Beam Epitaxy‐Grown Mg‐Doped GaN Subjected to a High‐Temperature Annealing Process

Leszek Konczewicz , Sandrine Juillaguet , Marcin Zajac , Elzbieta Litwin-Staszewska , Mohamed Al Khalfioui et al.

Physica Status Solidi A (applications and materials science), 2023, Nitride Semiconductors, 220 (16), pp.2200769. ⟨10.1002/pssa.202200769⟩

Article dans une revue hal-04248758v1
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Metal-insulator crossover in monolayer MoS 2

Ivanovitch Castillo Arvelo , Thibault Sohier , Matthieu Paillet , Dilek Cakiroglu , Christophe Consejo et al.

Nanotechnology, 2023, 34 (33), pp.335202. ⟨10.1088/1361-6528/acd3f7⟩

Article dans une revue (article de synthèse) hal-04144576v1
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Atomic-Spring-like Effect in Glassy Silica-Helium Composites

Daniel Bowron , David Keen , Mathieu Kint , Coralie Weigel , Benoît Rufflé et al.

Journal of Physical Chemistry C, 2022, 126 (12), pp.5722-5727. ⟨10.1021/acs.jpcc.2c00026⟩

Article dans une revue hal-03821835v1
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Electrical Transport Properties of Highly Doped N-Type GaN Materials

L Konczewicz , E Litwin-Staszewska , M Zajac , H Turski , M Bockowski et al.

Semiconductor Science and Technology, 2022, 37 (5), pp.055012. ⟨10.1088/1361-6641/ac5e01⟩

Article dans une revue hal-03845953v1
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Synthesis of a polyphenylacetylene/silica nanotube composite under high-temperature, high-pressure conditions

Marco Fabbiani , Jerome Rouquette , Gael Talbi , Martine Cambon , Olivier Cambon et al.

Canadian Journal of Chemistry, 2022, 100 (3), pp.239-243. ⟨10.1139/cjc-2021-0175⟩

Article dans une revue hal-03628395v1
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Negative Magnetoresistivity in Highly Doped n-Type GaN

Leszek Konczewicz , Malgorzata Iwinska , Elzbieta Litwin-Staszewska , Marcin Zajac , Henryk Turski et al.

Materials, 2022, 15 (20), pp.7069. ⟨10.3390/ma15207069⟩

Article dans une revue hal-03864839v1
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High-pressure, high-temperature synthesis of nanostructured polydiphenylbutadiyne confined in the 1-dimensional pores of single crystal AlPO4-54

Marco Fabbiani , Sebastiano Romi , Frederico Alabarse , Anna Celeste , Francesco Capitani et al.

CrystEngComm, 2022, 24 (40), pp.7109-7117. ⟨10.1039/d2ce00938b⟩

Article dans une revue hal-04266804v1
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Large inverted band gap in strained three-layer InAs/GaInSb quantum wells

Colin Avogadri , Sébastian Gebert , Sergey Krishtopenko , Ivanovitch Castillo Arvelo , Christophe Consejo et al.

Physical Review Research, 2022, 4 (4), pp.L042042. ⟨10.1103/physrevresearch.4.l042042⟩

Article dans une revue hal-03939599v2
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p-type conductivity in GaN:Zn monocrystals grown by ammonothermal method

Maciej Zajac , Leszek Konczewicz , Elzbieta Litwin-Staszewska , M. Iwinska , R. Kucharski et al.

Journal of Applied Physics, 2021, 129 (13), pp.135702. ⟨10.1063/5.0038524⟩

Article dans une revue hal-03416929v1
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High-Pressure Synthesis and Gas-Sensing Tests of 1-D Polymer/Aluminophosphate Nanocomposites

Frederico Alabarse , Michelangelo Polisi , Marco Fabbiani , Simona Quartieri , Rossella Arletti et al.

ACS Applied Materials & Interfaces, 2021, 13 (23), pp.27237-27244. ⟨10.1021/acsami.1c00625⟩

Article dans une revue hal-03295873v1
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Buffer layers inhomogeneity and coupling with epitaxial graphene unravelled by Raman scattering and graphene peeling

Tianlin Wang , Jean-Roch Huntzinger , Maxime Bayle , Christophe Roblin , Jean-Manuel Decams et al.

Carbon, 2020, 163, pp.224-233. ⟨10.1016/j.carbon.2020.03.027⟩

Article dans une revue hal-03034438v1
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High temperature electrical transport properties of MBE-grown Mg-doped GaN and AlGaN materials

L. Konczewicz , S. Juillaguet , E. Litwin-Staszewska , R. Piotrzkowski , H. Peyre et al.

Journal of Applied Physics, 2020, 128 (8), pp.085703. ⟨10.1063/1.5140561⟩

Article dans une revue hal-02931592v1

Optimization of the properties of the molybdenum back contact deposited by radiofrequency sputtering for Cu( In 1 − x Ga x ) Se 2 solar cells

Olivier Briot , Matthieu Moret , Camille Barbier , A. Tiberj , H. Peyre et al.

Solar Energy Materials and Solar Cells, 2018, 174, pp.418 - 422. ⟨10.1016/j.solmat.2017.09.019⟩

Article dans une revue hal-01596720v1

Growth of low doped monolayer graphene on SiC(0001) via sublimation at low argon pressure

Perine Landois , Tianlin Wang , Abir Nachawaty , Maxime Bayle , J.M. Decams et al.

Physical Chemistry Chemical Physics, 2017, 10.1039/c7cp01012e. ⟨10.1039/c7cp01012e⟩

Article dans une revue hal-01540335v1

High temperature electrical transport study of Si-doped AlN

Sylvie Contreras , Leszek Konczewicz , Jaweb Ben Messaoud , Herve Peyre , Mohamed Al Khalfioui et al.

Superlattices and Microstructures, 2016, 98, pp.253-258. ⟨10.1016/j.spmi.2016.08.038⟩

Article dans une revue hal-01425146v1

Influence of AlN thickness on AlGaN epilayer grown by MOCVD

M. Jayasakthi , Sandrine Juillaguet , Herve Peyre , Leszek Konczewicz , K. Baskar et al.

Superlattices and Microstructures, 2016, 98, pp.515-521. ⟨10.1016/j.spmi.2016.08.053⟩

Article dans une revue hal-01407865v1
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Applications of Vapor-Liquid-Solid Selective Epitaxy of Highly p-type Doped 4H-SiC: PiN Diodes with Peripheral Protection and Improvement of Specific Contact Resistance of Ohmic Contacts

Nicolas Thierry-Jebali , Mihai Lazar , A. Vo-Ha , D. Carole , V. Soulière et al.

Materials Science Forum, 2014, Silicon Carbide and Related Materials 2013, ⟨10.4028/www.scientific.net/MSF.778-780.639⟩

Article dans une revue hal-01987147v1
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Nitrogen Cycling Driven By Organic Matter Export In The South Pacific Oxygen Minimum Zone

T. Kalvelage , G. Lavik , P. Lam , Sylvie Contreras , L. Arteaga et al.

Nature Geoscience, 2013, 6 (3), pp.228-234. ⟨10.1038/ngeo1739⟩

Article dans une revue hal-00998635v1

Magnetotransport studies of AlGaN/GaN heterostructures with two-dimensional electron gas in parallel with a three-dimensional Al-graded layer: Incorrect hole type determination

Wilfried Desrat , Sylvie Contreras , Leszek Konczewicz , Benoit Jouault , M. Chmielowska et al.

Journal of Applied Physics, 2013, 114 (2), pp.023704. ⟨10.1063/1.4813220⟩

Article dans une revue hal-01208523v1
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Reversible optical doping of graphene

Antoine Tiberj , Miguel Rubio-Roy , Matthieu Paillet , Jean-Roch Huntzinger , Perine Landois et al.

Scientific Reports, 2013, 3 (1), ⟨10.1038/srep02355⟩

Article dans une revue hal-00989884v1
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Giant Hydrogen Sulfide Plume In The Oxygen Minimum Zone Off Peru Supports Chemolithoautotrophy

H. Schunck , G. Lavik , D. K. Desai , T. Grosskopf , T. Kalvelage et al.

PLoS ONE, 2013, 8 (8), pp.18. ⟨10.1371/journal.pone.0068661⟩

Article dans une revue hal-00998673v1

Catalytic activity and characterization of Pt/calcined CuZnAl hydrotalcites in nitrate reduction reaction in water

A. Aristizábal , M. Kolafa , Sylvie Contreras , M. Domínguez , J. Llorca et al.

Catalysis Today, 2011, 175, pp.370-379. ⟨10.1016/j.cattod.2011.02.044⟩

Article dans une revue istex hal-00644887v1

Catalytic reduction of nitrates in water on Pt promoted Cu hydrotalcite-derived catalysts: Effect of the Pt-Cu alloy formation

A. Aristizábal , Sylvie Contreras , Noelia Barrabés , J. Llorca , Didier Tichit et al.

Applied Catalysis B: Environmental, 2011, 110, pp.58-70. ⟨10.1016/j.apcatb.2011.08.024⟩

Article dans une revue istex hal-00687534v1
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Pt/CuZnAl mixed oxides for the catalytic reduction of nitrates in water: Study of the incidence of the Cu/Zn atomic ratio

A. Aristizabal , N. Barrabes , Sylvie Contreras , M. Kolafa , Didier Tichit et al.

Physics Procedia, 2010, 8, pp.44-48. ⟨10.1016/j.phpro.2010.10.010⟩

Article dans une revue hal-00545211v1

Unambiguous determination of carrier concentration and mobility for InAs/GaSb superlattice photodiode optimization

C. Cervera , J. B. Rodriguez , J. P. Perez , H. Ait-Kaci , R. Chaghi et al.

Journal of Applied Physics, 2009, 106, pp.033709. ⟨10.1063/1.3191175⟩

Article dans une revue hal-00536295v1

High temperature behaviour of AlGaN/AlN/GaN Hall-FET sensors

L. Bouguen , L. Konczewicz , S. Contreras , Benoit Jouault , J. Camassel et al.

Materials Science and Engineering: B, 2009, 165 (1-2), pp.1-4. ⟨10.1016/j.mseb.2008.11.041⟩

Article dans une revue istex hal-03037527v1

Effect of pressure on electrical properties of short period InAs/GaSb superlattice

Leszek Konczewicz , Sylvie Contreras , Hocine Aït-Kaci , Yvan Cuminal , Jean-Baptiste Rodriguez et al.

physica status solidi (b), 2009, 246 (3), pp.643 - 647. ⟨10.1002/pssb.200880520⟩

Article dans une revue istex hal-01756707v1

Ballistic effects up to room temperature in microscopic Hall sensors

Benoit Jouault , Wilfried Desrat , Olivier Couturaud , Sylvie Contreras , Dominique Mailly et al.

Journal of Applied Physics, 2009, 105 (7), pp.074504. ⟨10.1063/1.3103303⟩

Article dans une revue hal-00394184v1
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Finite element modeling for temperature stabilization of gated Hall sensors

Benoit Jouault , L. Bouguen , Sylvie Contreras , A. Kerlain , Vincent Mosser

Journal of Applied Physics, 2008, 104 (5), pp.053705. ⟨10.1063/1.2968436⟩

Article dans une revue hal-00388502v1

Investigation of AlGaN/AlN/GaN heterostructures for magnetic sensor application from liquid helium temperature to 300 degrees C

Laure Bouguen , Sylvie Contreras , Benoit Jouault , Leszek Konczewicz , Jean Camassel et al.

Applied Physics Letters, 2008, 92, pp.043504. ⟨10.1063/1.2838301⟩

Article dans une revue hal-00535633v1

Electrical resistivity and metal-nonmetal transition in n-type doped 4H-SiC

Antonio Ferreira da Silva , Julien Pernot , Sylvie Contreras , Bo E. Sernelius , Clas Persson et al.

Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2006, 74, pp.245201. ⟨10.1103/PhysRevB.74.245201⟩

Article dans une revue hal-00536294v1

Electrical transport properties of aluminum-implanted 4H-SiC

Julien Pernot , Sylvie Contreras , Jean Camassel

Journal of Applied Physics, 2005, 98 (2), pp.23706. ⟨10.1063/1.1978987⟩

Article dans une revue hal-00389873v1

Technical aspects of < 1120 > 4H-SiC MOSFET processing

Caroline Blanc , D. Tournier , V. Souliere , Sandrine Juillaguet , Sylvie Contreras et al.

Physica Status Solidi A (applications and materials science), 2005, 202, pp.680-685. ⟨10.1002/pssa.200460473⟩

Article dans une revue istex hal-00541644v1

High pressure study of the electrical transport phenomena in AlGaN/GaN heterostructures

C Consejo , L Konczewicz , S Contreras , Benoit Jouault , S Lepkowsky et al.

physica status solidi (b), 2003, 235 (2), pp.232-237. ⟨10.1002/pssb.200301562⟩

Article dans une revue istex hal-03037546v1

Electrical transport properties in (111) growth-axis GaAlAs/GaInAs heterostructures

Leszek Konczewicz , Benoit Jouault , Sylvie Contreras , Ml Sadowski , Jean-Louis Robert et al.

physica status solidi (b), 2001, 223, pp.507-512

Article dans une revue hal-00544463v1

Vers la maitrise de la morphologie de surface et de la couche tampon en dessous du graphène sur SiC (0001)

Périne Landois , Haitham Hrich , A Bensebaa , C Coillot , L Konczewicz et al.

SFEC colloque annuel, CEA NIMBE, May 2026, Aussois (FR), France

Communication dans un congrès hal-05635658v1

Étude des propriétés électrochimiques des différents types de graphène

Thinhinane Hamadachi , Yves Pain , Christophe Coillot , Jimmy Nicolle , Mohamed-Ramzi Ammar et al.

SFEC, May 2026, Aussois (FR), France

Communication dans un congrès hal-05638955v1
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AlGaN channel high electron mobility transistors on Si for power electronics

Julien Bassaler , Jash Mehta , Idriss Abid , Leszek Konczewicz , Sandrine Juillaguet et al.

Symposium de Génie Électrique SGE 2025, CNRS, Jul 2025, Toulouse, France

Communication dans un congrès hal-05398228v1

Functionalisation of CVD and Epitaxial Graphene Electrodes by Electropolymerization of Molecularly Imprinted Polymers for Sensing of Isoproturon

Christine Vautrin-Ul , Yves Pain , Thinhinane Hamadachi , Aïda Bensebaa , Jimmy Nicolle et al.

ISE 2025, Sep 2025, Mayence, Germany

Communication dans un congrès hal-05638959v1

Electropolymérisation du polypyrrole sur graphène CVD et graphène épitaxié pour le développement de capteurs environnementaux

Christine Vautrin-Ul , Oumayma Lourhzal , Yves Pain , Abed-Albaset Taleb , Céline Grillot et al.

SFEC 2023, Société Francophone d’Etude des Carbones; Université des Antilles; COVACHIM-M2E; Groupe de Technologie des Surfaces et Interfaces, May 2023, Gosier (Guadeloupe), France

Communication dans un congrès hal-05514643v1

Studying of the electropolymerisation on CVD graphene and epitaxial graphene on silicon carbide

Yves Pain , Christophe Coillot , Perine Landois , Jimmy Nicolle , Mohamed Ramzi Ammar et al.

Carbon 2023, Jul 2023, Cancun, Quintana Roo, Mexico

Communication dans un congrès hal-04716226v1

Etude de l’électropolymérisation sur graphène épitaxié sur carbure de silicium

Yves Pain , Christophe Coillot , Périne Landois , Jimmy Nicolle , M.-R. Ammar et al.

MatV2L, Fédération MatV2L, Jul 2023, Orléans, France

Communication dans un congrès hal-05514701v1
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Toward the Reproducible Growth of Graphene on Wide SiC Steps: A Study of the Geometric Properties of 4H-SiC (0001) Substrates

Haitham Hrich , Matthieu Moret , Olivier Briot , Matthieu Paillet , Jean Manuel Decams et al.

ECSCRM 2021, Oct 2021, Tours (FR), France. pp.59-63, ⟨10.4028/p-1ak21z⟩

Communication dans un congrès hal-03845325v1

Comparaison des réactivités de surfaces de graphènes produits par voie CVD et exfoliation électrochimique : Le rôle des défauts cristallographiques dans la réactivité de surface pour des applications de capteurs environnementaux

Jimmy Nicolle , Mohamed-Ramzi Ammar , Fabienne Warmont , Marylène Vayer , Sylvie Contreras et al.

MATV2L, Jun 2022, Limoges (France), France

Communication dans un congrès hal-05638970v1
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Capteur de gaz à base de graphène dédié au bilan carbone du cOMPOSTage de proximité

V. Astié , Nicolas Brun , Christophe Coillot , Sylvie Contreras , J.M. Decams et al.

ID en action !, Mission pour les initiatives transverses et interdisciplinaires du CNRS (MITI), Nov 2022, Paris, France

Communication dans un congrès hal-04209570v1

Démonstration d’une électrode de graphène en vue d’une détection électrochimique de polluants en milieu aqueux

Yves Pain , Christophe Coillot , Christophe Roblin , Périne Landois , Jimmy Nicolle et al.

Société Francophone d’Etude des Carbones (SFEC), Apr 2022, Nouan-le-Fuzelier, France

Communication dans un congrès hal-04786003v1

Comparaison des réactivités de surfaces de graphènes produits par voie CVD et exfoliation électrochimique : Le rôle des défauts cristallographiques dans la réactivité de surface pour des applications de capteurs environnementaux

Jimmy Nicolle , Périne Landois , Abed-Albaset Taleb , Oumeyma Lourzhal , Imer Sadriu et al.

Matériaux 2022, Oct 2022, Lille (FR), France

Communication dans un congrès hal-05638975v1

Epitaxial graphene growth and characterisation of buffer layer on SiC(0001)

Tianlin Wang , Jean-Roch Huntzinger , Jean-Manuel Decams , Maxime Bayle , Ahmed Azmi Zahab et al.

2D materials on substrates: growth & properties, Jan 2020, Villard de Lans, France

Communication dans un congrès hal-03040807v1

Sublimation de carbure de silicium : de la couche tampon à la monocouche de graphène

Perine Landois , Jean-Roch Huntzinger , Tianlin Wang , Maxime Bayle , Benoit Jouault et al.

Congrès annuel SFEC, Apr 2020, Samatan, France

Communication dans un congrès hal-03040832v1

Epitaxial graphene growth at low argon pressure and characterization of buffer layer on SiC(0001)

Tianlin Wang , Perine Landois , Jean-Roch Huntzinger , Ahmed Azmi Zahab , Alessandro de Cecco et al.

GDR-I Graphene and co Annual meeting 2018, Oct 2018, Sète, France

Communication dans un congrès hal-01923963v1

Epitaxial growth of low doped monolayer graphene on 4H-SIC (0001) at low argon pressure

Tianlin Wang , Perine Landois , Maxime Bayle , Jean-Roch Huntzinger , Alessandro de Cecco et al.

GDR-I Graphene and co Annual meeting 2017, Oct 2017, Aussois, France

Communication dans un congrès hal-01924058v1

Comparative study of p-type 4H-SiC grown on n-type and semi insulating 4H-SiC substrates

Sylvie Contreras , Leszek Konczewicz , Roxana Arvinte , Herve Peyre , Thierry Chassagne et al.

11th European Conference on Silicon Carbide and Related Materials, Sep 2016, Thessaloniki, Greece. pp.275

Communication dans un congrès hal-01935564v1

Electrical transport properties of p-type 4H-SiC

Sylvie Contreras , Leszek Konczewicz , Roxana Arvinte , Herve Peyre , Thierry Chassagne et al.

E-MRS : Wide bandgap materials for electron devices, May 2016, Lille, France. pp.1600679, ⟨10.1002/pssa.201600679⟩

Communication dans un congrès hal-01540938v1

Optical investigations and strain effect in AlGaN/GaN epitaxial layers

M. Jayasakthi , Sandrine Juillaguet , Herve Peyre , Leszek Konczewicz , Matthieu Moret et al.

33RD INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS, 2017, PEKIN, China. pp.UNSP 012021, ⟨10.1088/1742-6596/864/1/012021⟩

Communication dans un congrès hal-01935164v1

Influence of Growth Temperature on Site Competition Effects During Chemical Vapor Deposition of 4H-SiC Layers

Marcin Zielinski , Thierry Chassagne , Roxana Arvinte , Adrien Michon , Marc Portail et al.

11th European Conference on Silicon Carbide and Related Materials, Sep 2016, Thessaloniki, Greece. pp.79

Communication dans un congrès hal-01935556v1

High Temperature Annealing of MBE-grown Mg-doped GaN

Sylvie Contreras , Leszek Konczewicz , Herve Peyre , Sandrine Juillaguet , M. Al Khalfioui et al.

33RD INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS, 2017, Peking, China. pp.UNSP 012018, ⟨10.1088/1742-6596/864/1/012018⟩

Communication dans un congrès hal-01935176v1

Electrical Transport Properties of Highly Aluminum Doped p-Type 4H-SiC

Sylvie Contreras , Leszek Konczewicz , Pawel Kwasnicki , Roxana Arvinte , Herve Peyre et al.

16th International Conference on Silicon Carbide and Related Materials, Oct 2015, Catane, Italy. pp.249 - 252, ⟨10.4028/www.scientific.net/MSF.858.249⟩

Communication dans un congrès hal-01936580v1

p-Type Doping of 4H- and 3C-SiC Epitaxial Layers with Aluminum

Marc Zielinski , Roxana Arvinte , Thierry Chassagne , Adrien Michon , Marc Portail et al.

ICSCRM, Oct 2015, Giardini Naxos, France. pp.137 - 142, ⟨10.4028/www.scientific.net/MSF.858.137⟩

Communication dans un congrès hal-01936467v1

Non-trivial Berry phase in the Cd3As2 3D Dirac semimetal

Wilfried Desrat , Christophe Consejo , Frederic Teppe , Sylvie Contreras , M. Marcinkiewicz et al.

EDISON 19, Jun 2015, Salamanca, Spain. ⟨10.1088/1742-6596/647/1/012064⟩

Communication dans un congrès hal-01932656v1

Midwave infrared InAs/GaSb superlattice photodiode with a dopant-free p-n junction

M. Delmas , J. B. Rodriguez , R. Taalat , Leszek Konczewicz , Wilfried Desrat et al.

8th International Workshop on Quantum Structure Infrared Photodetectors (QSIP), Jun 2014, Santa-Fe, United States. pp.76-80, ⟨10.1016/j.infrared.2014.09.036⟩

Communication dans un congrès hal-01216731v1

Study of Geometrical Effects in Charge Pumping Current for Lateral SiC nMOSFETs Electrical Characterization

Matthieu Florentin , Joan Marc Rafi , Florian Chevalier , Victor Soler , Leszek Konczewicz et al.

10th European Conference on Silicon Carbide and Related Materials, Sep 2014, Grenoble, France. pp.717 - 720, ⟨10.4028/www.scientific.net/MSF.821-823.717⟩

Communication dans un congrès hal-01936637v1

Improvement of the Specific Contact Resistance on P-Type 4H-SiC by Using a Highly P-Typed Doped 4H-SiC Layer Selectively Grown by VLS Transport

Nicolas Thierry-Jebali , Arthur Vo-Ha , Davy Carole , Mihai Lazar , Gabriel Ferro et al.

HeteroSiC-WASMPE, Jun 2013, Nice, France. pp.57 - 60, ⟨10.4028/www.scientific.net/MSF.806.57⟩

Communication dans un congrès hal-01391861v1

Genomic and EST microsatellite loci development and use in olive: molecular tools for genetic mapping and association studies

Laila Essalouh , A. Z. El-Aabidine , Sylvie Contreras , I. B. Sadok , Sylvain Santoni et al.

7. International Symposium on Olive Growing, International Society for Horticultural Science (ISHS). Leuven, INT., Sep 2012, San Julian, Argentina. 736 p

Communication dans un congrès hal-01269135v1

Raman Investigation of Heavily Al Doped 4H-SiC Layers Grown by CVD

Pawel Kwasnicki , Roxana Arvinte , Herve Peyre , Marcin Zielinski , Leszek Konczewicz et al.

HETEROSIC 2013, Jun 2013, nice, France. pp.51 - 55, ⟨10.4028/www.scientific.net/MSF.806.51⟩

Communication dans un congrès hal-01936666v1

Raman spectroscopy as a tool to study the doping of graphene

Antoine Tiberj , Miguel Rubio-Roy , Romain Parret , Matthieu Paillet , Jean-Roch Huntzinger et al.

Nanospain Conference 2014, Mar 2014, Spain

Communication dans un congrès hal-00989874v1

La spectrométrie Raman comme outil pour l'étude du dopage du graphène

Matthieu Paillet , Romain Parret , Miguel Rubio-Roy , Antoine Tiberj , Jean-Roch Huntzinger et al.

Matériaux 2014, Nov 2014, Montpellier, France

Communication dans un congrès hal-01974125v1

Reversible Optical Doping of graphene

Antoine Tiberj , Miguel Rubio-Roy , Matthieu Paillet , Jean-Roch Huntzinger , Périne Landois et al.

ImagineNano/Nanospain 2013, Apr 2013, Bilbao, Spain

Communication dans un congrès hal-00954962v1

Pressure studies of multicarrier conduction in undoped InN grown on GaN buffer

H. Dmowski , Leszek Konczewicz , T. Suski , Sylvie Contreras , H. Lu et al.

HPSP 2012, Jul 2012, Montpellier, France. pp.746 - 749, ⟨10.1002/pssb.201200508⟩

Communication dans un congrès istex hal-01936833v1

Raman investigation of aluminum-doped 4H-SiC

Sandrine Juillaguet , Pawel Kwasnicki , Herve Peyre , Leszek Konczewicz , Sylvie Contreras et al.

ECSCRM 2012, Sep 2012, Saint-Petersburg, Russia. pp.357-360, ⟨10.4028/www.scientific.net/MSF.740-742.357⟩

Communication dans un congrès hal-00803766v1

Changes induced by doping on the Raman spectrum of monolayer and bilayer graphene

Jean-Louis Sauvajol , Matthieu Paillet , Antoine Tiberj , Jean-Roch Huntzinger , Romain Parret et al.

Advances and Applications in Carbon Related nanomaterials: From pure to doping including heteroatom, Sep 2013, Castelldefels, Spain

Communication dans un congrès hal-00867474v1

P3 : un outil pour la formation &#224; la gestion et au pilotage d&#39;ateliers de production

Patrick Pujo , F Ounnar , B Borriello , Sylvie Contreras , M C Gonzalez

VII° colloque 'Questions de Pédagogies dans l'Enseignement Supérieur' (QPES'13), 2013, Sherbrooke, Unknown Region

Communication dans un congrès hal-01216885v1

Reversible Optical Doping of graphene

Antoine Tiberj , Miguel Rubio-Roy , Matthieu Paillet , Jean-Roch Huntzinger , Périne Landois et al.

GDR-I GNT 2013, Apr 2013, Guidel-Plages, Lorient, France

Communication dans un congrès hal-00813854v1

Structural and Electrical Properties of Graphene Films Grown by Propane/Hydrogen CVD on 6H-SiC(0001)

A. Michon , E. Roudon , M. Portail , Benoit Jouault , S. Contreras et al.

SILICON CARBIDE AND RELATED MATERIALS 2011, PTS 1 AND 2, 2012, KREUZSTRASSE 10, 8635 DURNTEN-ZURICH, Switzerland. pp.625+, ⟨10.4028/www.scientific.net/MSF.717-720.625⟩

Communication dans un congrès hal-03037521v1

Low Temperature Photoluminescence Investigation of 3-inch SiC Wafers for Power Device Applications

Hervé Peyre , Jianwu Sun , Jude Guelfucci , Sandrine Juillaguet , J. Hassan et al.

HeteroSiC & WASMPE 2011, Jun 2011, TOURS, France. pp.164-168, ⟨10.4028/www.scientific.net/MSF.711.164⟩

Communication dans un congrès hal-00655897v1

Mobility spectrum analysis on AlGaN/AlN/GaN heterostructures grown on Fe-doped GaN templates

Sylvie Contreras , Wilfried Desrat , Leszek Konczewicz

EXMATEC 2012, May 2012, Ile de Porquerolles, France

Communication dans un congrès hal-00806216v1

Performances Analysis of Symmetrical and Asymmetrical InAs/GaSb Superlattice pin Photodiode

Cyril Cervera , Rachid Taalat , Philippe Christol , Jean-Baptiste Rodriguez , K. Jaworowicz et al.

Conference on Infrared Technology and Applications XXXVII, Apr 2011, Orlando, United States. pp.801213, ⟨10.1117/12.882133⟩

Communication dans un congrès hal-00641337v1

Propriétés électriques de photodiodes infrarouges à superréseaux InAs/GaSb

C. Cervera , J.-B. Rodriguez , Philippe Christol , L. Konczewicz , Sylvie Contreras et al.

XIIIème Journées Nationales Microélectronique Optoélectronique (JNMO), 2010, Les Issambres, France

Communication dans un congrès hal-01831153v1

Electronic Properties of InAs/GaSb Superlattice Detectors to Evaluate High Temperature Operation.

Philippe Christol , C. Cervera , R. Chaghi , H. Ait-Kaci , J. B. Rodriguez et al.

Conference On Quantum Sensing and Nanophotonic Devices VII, Jan 2010, San Francisco (CA), France. pp.76081U

Communication dans un congrès hal-00543643v1

Residual carrier concentration in InAs/GaSb superlattice structures to define optimized midwave infrared photodiode

L. Konczewicz , Sylvie Contreras , M. Baj , C. Cervera , J.-P. Perez et al.

Exmatec Conference, 2010, Darmstadt, Germany

Communication dans un congrès hal-01831030v1

Transport measurements on InAs/GaSb superlattice structures for mid-infrared photodiode

C. Cervera , Jean-Philippe Perez , Radouane Chaghi , Jean-Baptiste Rodriguez , Philippe Christol et al.

16th International Conference on Electron Dynamics in Semiconductors, Optoelectronics and Nanostructures (EDISON 16), Aug 2009, Montpellier (FRANCE), France. pp.012030

Communication dans un congrès hal-00536291v1

Effect of pressure on electrical properties of short period InAs/GaSb superlattice

Leszek Konczewicz , Sylvie Contreras , H. Aït-Kaci , Y. Cuminal , Jean-Baptiste Rodriguez et al.

13th International Conference on High Pressure Semiconductor Physics (HPSP-13), Jul 2008, Fortaleza (BRAZIL), France. pp.643-647

Communication dans un congrès hal-00401354v1

High temperature behaviour of AlGaN/AlN/GaN Hall-FET sensors

Laure Bouguen , Leszek Konczewicz , Sylvie Contreras , Benoit Jouault , Jean Camassel et al.

9th International Workshop on Expert Evaluation and Control Compound Semiconductor Materials and Technologies, Jun 2008, Lodz (POLAND), France. pp.1-4

Communication dans un congrès hal-00536293v1

Electrical transport phenomena in magnesium-doped p-type GaN

Leszek Konczewicz , Elzbieta Litwin-Staszewska , Sylvie Contreras , Ryszard Piotrzkowski , Leslaw Dmowski

13th International Conference on High Pressure Semiconductor Physics (HPSP-13), Jul 2008, Fortaleza (BRAZIL), France. pp.658-663

Communication dans un congrès hal-00401355v1

Zero-thermal drift quantum Well Hall Sensor

Vincent Mosser , A. Kerlain , Youcef Haddab , L. Bouguen , Benoit Jouault et al.

Proceeding Eurosensors XXII, Sep 2008, Dresden, Germany

Communication dans un congrès hal-00394192v1

Pressure characterization of AlGaN/GaN Hall sensors

Leszek Konczewicz , Sylvie Contreras , L. Bouguen , Benoit Jouault , Jean Camassel et al.

13th International Conference on High Pressure Semiconductor Physics, Jul 2008, Fortaleza,, Brazil

Communication dans un congrès hal-00401344v1

Evaluation of magnetic sensors based on AlGaN/GaN heterostructures: temperature dependence

L. Bouguen , Sylvie Contreras , Benoit Jouault , L. Konczewicz , Y. Cordier et al.

Proceeding of 16th European workshop on Heterostructure Technology, Sep 2007, Frejus, France

Communication dans un congrès hal-00394196v1

Top injection and side injection to a buried 2DEG : beyond the Murrmann-Berger model

Vincent Mosser , A. Kerlain , Olivier Couturaud , Christophe Chaubet , Benoit Jouault et al.

Proceeding of 16th European workshop on Heterostructure Technology, Sep 2007, Frejus, France

Communication dans un congrès hal-00394194v1

Results of SIMS, LTPL and temperature-dependent Hall effect measurements performed on Al-doped alpha-SiC substrates grown by the M-PVT method

Sylvie Contreras , M. Zielinski , Leszek Konczewicz , Caroline Blanc , Sandrine Juillaguet et al.

International Conference on Silicon Carbide and Related Materials (ICSCRM 2005), Sep 2005, Pittsburgh (PA), France. pp.633-636

Communication dans un congrès hal-00536296v1

Impact of annealing temperature ramps on the electrical activation of N+ and P+ co-implanted SiC layers

S. Blanque , R. Perez , N. Mestres , Sylvie Contreras , Jean Camassel et al.

International Conference on Silicon Carbide and Related Materials (ICSCRM 2005), Sep 2005, Pittsburgh (PA), France. pp.795-798

Communication dans un congrès hal-00536300v1

Evaluation of p-type doping for (1,1,-2,0) epitaxial layers grown on alpha-cut (1,1,-2,0) 4H-SiC substrates

Caroline Blanc , M. Zielinski , V. Souliere , C. Sartel , Sandrine Juillaguet et al.

5th European Conference on Silicon Carbide and Related Materials, Aug 2004, Bologna (ITALY), France. pp.117-120

Communication dans un congrès hal-00541640v1

Electrical properties of p-type in-situ doped vs. Al-implanted 4H-SiC

J. Pernot , Sylvie Contreras , Jean Camassel , Jean-Louis Robert

5th European Conference on Silicon Carbide and Related Materials, Aug 2004, Bologna (ITALY), France. pp.401-404

Communication dans un congrès hal-00543771v1

High temperature electrical investigations of (AI,Ga)N/GaN heterostructures - Hall sensor applications

Christophe Consejo , Sylvie Contreras , Leszek Konczewicz , P. Lorenzini , Y. Cordier et al.

7th International Workshop on Expert Evaluation and Control of Compound Semiconductor Materials and Technologies, Jun 2004, Montpellier (FRANCE), France. pp.1438-1443

Communication dans un congrès hal-00543735v1

Innovative pressure and Hall sensors based on semiconductor compounds

Sylvie Contreras , Vincent Mosser , Leszek Konczewicz , Jean Camassel , Jean-Louis Robert

ESTEC, 4th Round Table on Micro/Nano Technologies for Space, May 2003, Noordwijk, Netherlands

Communication dans un congrès hal-00402969v1

High pressure study of the electrical transport phenomena in AlGaN/GaN heterostructures

Christophe Consejo , Leszek Konczewicz , Sylvie Contreras , Benoit Jouault , S. Lepkowsky et al.

10th International Conference on High Pressures in Semiconductor Physics (HPSP-X), Aug 2002, GUILDFORD (ENGLAND), France. pp.232-237

Communication dans un congrès hal-00544457v1

From Transport Measurements to Infrared Reflectance Spectra of n-type Doped 4H-SiC Layer Stacks

Julien Pernot , Jean Camassel , Hervé Peyre , Sylvie Contreras , Jean-Louis Robert

European Conference on Silicon Carbide and Related Materials (ECSCRM2002), Sep 2002, Linköping, Sweden. pp.403-406

Communication dans un congrès hal-00389889v1

4H-SiC material for Hall effect and high-temperature sensors working in harsh environments

Jean-Louis Robert , Sylvie Contreras , Jean Camassel , J. Pernot , Sandrine Juillaguet et al.

International Conference on Silicon Carbide and Related Materials, Oct 2001, TSUKUBA (JAPAN), France. pp.1435-1438

Communication dans un congrès hal-00543769v1

Improved SiCOI Structures Elaborated by Heteroepitaxy of 3C-SiC on SOI

Thierry Chassagne , Gabriel Ferro , H. Y. Wang , Yanis Stoemenos , Hervé Peyre et al.

International Conference on Silicon and Carbide and Related Materials 2001 (9th) (ICSCRM2001), Oct 2001, Tsukuba, Japan. pp.343-346

Communication dans un congrès hal-00389892v1

Process-induced strain in silicon-on-insulator materials

Antoine Tiberj , B. Fraisse , Caroline Blanc , Sylvie Contreras , Jean Camassel

Conference on Extended Defects in Semiconductors (EDS 2002), Jun 2002, BOLOGNA (ITALY), France. pp.13411-13416

Communication dans un congrès hal-00543870v1

A novel selectively delta-doped AlGaAs/(In,Ga,As)/GaAs pseudomorphic heterostructure

L. Bouzaiene , L. Sfaxi , H. Sghaeir , H. Maaref , A. Cavanna et al.

Spring Conference of the E-MRS/IUMRS/ICEM, May 2000, Strasbourg, France. pp.299-303, ⟨10.1016/S0925-3467(01)00095-7⟩

Communication dans un congrès istex hal-00544461v1

Raman, low temperature photoluminescence and transport investigation of N-implanted 6H-SiC

P. Thomas , Sylvie Contreras , Sandrine Juillaguet , Jean-Louis Robert , Jean Camassel et al.

7th International Conference on Silicon Carbide, III-Nitrides and Related Materials (ICSCIII-N 97), Aug 1997, STOCKHOLM (SWEDEN), France. pp.725-728

Communication dans un congrès hal-00543782v1

Study of the local properties of epitaxial graphene on silicon carbide by scanning nanoelectrochemical microscopy correlated with AFM and Raman characterization

Thinhinane Hamadachi , Yves Pain , Aïda Bensebaa , Christophe Coillot , Jimmy Nicolle et al.

Carbon 2025, Jun 2025, Saint Malo (FR), France

Poster de conférence hal-05638964v1

Comparison of the chemical reactivity between graphene produced by topdown and bottom-up approach: The impact of crystallographic defaults on the surface reactivity on graphene

Jimmy Nicolle , Périne Landois , Abed-Albaset Taleb , Marylène Vayer , Jean-Manuel Decams et al.

Carbon 2025, Jun 2025, Saint Malo (FR), France

Poster de conférence hal-05638961v1

Comparison of the chemical reactivity between graphene produced by topdown and bottom-up approach: The impact of crystallographic defaults on the surface reactivity on graphene

Jimmy Nicolle , Périne Landois , Taleb Abed Al-Baset , Marylène Vayer , Jean-Manuel Decams et al.

CARBON 2025, Jun 2025, Saint malo, France. ⟨10.1016/0022-0728(92)80415-Z.⟩

Poster de conférence istex hal-05638780v1

Study and comparison of the electrochemical detection performance of isoproturon in water by functionalizing CVD graphene, epitaxial graphene, and glassy carbon electrodes with molecularly imprinted polymers

Thinhinane Hamadachi , Yves Pain , Aïda Bensebaa , Jimmy Nicolle , Mohamed-Ramzi Ammar et al.

Carbon 2025, Jun 2025, Saint Malo (FR), France

Poster de conférence hal-05638960v1
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Towards an understanding of vanadium doping effects in 4H-SiC

Harmke van Dijk , Matthieu Paillet , Océane Février , Sandrine Juillaguet , S. Contreras et al.

Les Journées Nano, Micro et Optoélectronique (JNMO), Oct 2024, Sète, France

Poster de conférence hal-04829444v1
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Micro capteur à base de graphène pour la détection électrochimique de micropolluants

Aïda Bensebaa , Yves Pain , Abed Albaset Taleb , Vincent Astié , Jean-Manuel Decams et al.

Les Journées Nano, Micro et Optoélectronique (JNMO), 2024, Oct 2024, Sète (FR), France

Poster de conférence hal-04738395v1
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Simulateur de voltampérométrie cyclique sous Python dédié à un micro-capteur à base de graphène

Aïda Bensebaa , Yves Pain , Périne Landois , Sylvie Contreras , Christine Vautrin-Ul et al.

Les Journées Electrochimiques 2024, Jul 2024, Saint - Malo, France

Poster de conférence hal-04701580v1
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Genèse, contenu et perspectives d'un module expérimental d'éducation à la transition écologique à la Faculté des Sciences de l'université de Montpellier.

Olivier Arnould , Sandrine Bardet , Jean-Louis Bantignies , Adeline Barnaud , Ilham Bentaleb et al.

Colloque ETES 2023 : Enseigner les transitions écologiques et sociales dans le supérieur, Jul 2023, Paris, France. 2023

Poster de conférence hal-04204671v1

Design and properties of composites made of bismuth nanowires confined in mesoporous silica and alumina for Peltier applications

Romain Viennois , Marco Fabbiani , Yixuan Zhao , Julien Haines , Olivier Cambon et al.

19th European Conference on Thermoelectrics, Sep 2023, Prague, Czech Republic

Poster de conférence hal-04589106v1
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Development of a graphene microsensor network for the electrochemical detection of micropollutants in water

Yves Pain , Christophe Coillot , Christophe Roblin , Périne Landois , Jimmy Nicolle et al.

Journées d'Electrochimie 2022, Jul 2022, Mons, Belgium

Poster de conférence hal-04785868v1
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Giant step bunching occurrence during graphene growth on 4H SiC(0001)

Haitham Hrich , Matthieu Paillet , Tianlin Wang , Jean-Manuel Decams , Sylvie Contreras et al.

Graphene 2020 on line, Oct 2020, On line, France

Poster de conférence hal-03039790v1
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Graphene: From Material to applications

Périne Landois , Sébastien Nanot , Benoit Jouault , Dilek Cakiroglu , Sylvie Contreras et al.

Graphene And Co Annual Meeting 2019, Oct 2019, Bad Herrenalb, Germany.

Poster de conférence hal-03144975v1

Effect of Temperature on Electrical Transport Properties of MBE grown Mg-doped GaN and AlGaN

Sylvie Contreras , Leszek Konczewicz , Sandrine Juillaguet , Herve Peyre , Mohamed Al Khalfioui et al.

International Workshop on Nitride Semiconductor, Nov 2018, Kanazawa, Japan

Poster de conférence hal-01937531v1

Growth of epitaxial graphene on SiC (0001) at low argon pressure and its characterization

Tianlin Wang , Perine Landois , Maxime Bayle , Jean-Roch Huntzinger , Alessandro de Cecco et al.

ICPS, Jul 2018, Montpellier, France

Poster de conférence hal-01924077v1

Photoluminescence study of Mg-doped GaN and AlxGa1-xN (x<0.4) grown by molecular epitaxy

Julien Brault , Mathieu Leroux , Samuel Matta , Mohamed Al Khalfioui , Benjamin Damilano et al.

International Workshop on Nitride Semiconductor, Nov 2018, Kanazawa, Japan

Poster de conférence hal-01937537v1

Quantum Dot based UV Light Emitting Diodes

Julien Brault , Samuel Matta , Mohamed Al Khalfioui , Mathieu Leroux , Benjamin Damilano et al.

12th international conference on nitride semiconductors, Jul 2017, STRASBOURG, France

Poster de conférence hal-01937757v1

Growth of p-type monolayer graphene on SiC (0001) via sublimation at low argon pressure

Tianlin Wang , Perine Landois , Maxime Bayle , Abir Nachawaty , Wilfried Desrat et al.

GDR, Oct 2016, Oleron, France

Poster de conférence hal-01455032v1

Studying the number of graphene layers on copper substrate

Perine Landois , Maxime Bayle , J.M. Decams , Axel Dieraert , Jean-Roch Huntzinger et al.

GDR-GNT, Nov 2015, Aussois, France

Poster de conférence hal-01340108v1